Nanomorph Silicon Thin Films Prepared by Using an HW-MWECR CVD System
HU Yue-Hui1,2, CHEN Guang-Hua1, ZHOU Jian-Er2, RONG Yan-Dong1, LI Ying1, SONG Xue-Mei1, ZHANG Wen-Li1, DING Yi1, GAO Zhuo1, MA Zhan-Jie1, ZHOU Huai-En1, ZHU Xiu-Hong1
1Department of Materials Science and Engineering, Beijing University of Technology, Beijing 100022
2Institute of Jingdezhen Ceramic, Jingdezhen 333001
Nanomorph Silicon Thin Films Prepared by Using an HW-MWECR CVD System
Abstract： We have prepared hydrogenated nano-amorph silicon (na-Si:H) films by using a hot-wire-assisted microwave electron-cyclotron-resonance (HW-MWECR) chemical vapour deposition (CVD) system. The films are deposited in two steps: in the first 9min, a hydrogenated amorphous silicon layer is deposited by using hydrogen-diluted silane with a concentration of SiH4/(SiH4+H2)=20%, and then a nanocrystalline silicon (nc-Si) layer is deposited by using various highly hydrogen-diluted silane. The Raman TO-like mode peak of the films was found in the range 497-508cm$^{-1}$. When the silane concentration used for preparation of the nc-Si layer is 14.3%, the film has a large crystalline volume fraction of 65.4%, a wide optical band gap of 1.89eV and a low hydrogen content of 9.5at.%. Moreover, the na-Si:H films rather than nc-Si possess high photosensitivity of about 105.
HU Yue-Hui;CHEN Guang-Hua;ZHOU Jian-Er;RONG Yan-Dong;LI Ying;SONG Xue-Mei;ZHANG Wen-Li;DING Yi;GAO Zhuo;MA Zhan-Jie;ZHOU Huai-En;ZHU Xiu-Hong. Nanomorph Silicon Thin Films Prepared by Using an HW-MWECR CVD System[J]. 中国物理快报, 2005, 22(5): 1260-1263.
HU Yue-Hui, CHEN Guang-Hua, ZHOU Jian-Er, RONG Yan-Dong, LI Ying, SONG Xue-Mei, ZHANG Wen-Li, DING Yi, GAO Zhuo, MA Zhan-Jie, ZHOU Huai-En, ZHU Xiu-Hong. Nanomorph Silicon Thin Films Prepared by Using an HW-MWECR CVD System. Chin. Phys. Lett., 2005, 22(5): 1260-1263.
2005, Vol. 22 
