Characterization of Defects in Chemical Vapour Deposited Diamonds
ZHANG Ming-Long, XIA Yi-Ben, WANG Lin-Jun, GU Bei-Bei
School of Materials Science and Engineering, Shanghai University, Shanghai 200072
Characterization of Defects in Chemical Vapour Deposited Diamonds
ZHANG Ming-Long;XIA Yi-Ben;WANG Lin-Jun;GU Bei-Bei
School of Materials Science and Engineering, Shanghai University, Shanghai 200072
关键词 ：
81.15.Gh ,
81.05.Uw
Abstract ： Room-temperature Raman and PL spectra, photocurrent (PC) and thermally stimulated current (TSC) were measured to investigate the mid-gap defects in diamonds grown by using a hot-filament chemical vapour deposition (CVD) technique. The [Si-V]0 centres caused by the Si-C bonds in diamond grains and at grain boundaries are located at 1.68eV. We firstly detect the level 1.55eV by using PL and it is tentatively attributed to the zero-phonon luminescence line or vibronic band of the [Si-V]0 induced by the Si-O bonds. The 2.7-3.2eV and 1.9-2.1eV PC peaks were detected and discussed. The [N-V] complex may be attributed to these defect levels. Some shallow energy levels lower than 1.0eV were also observed in the CVD diamond.
Key words ：
81.15.Gh
81.05.Uw
出版日期: 2005-05-01
:
81.15.Gh
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
81.05.Uw
引用本文:
ZHANG Ming-Long;XIA Yi-Ben;WANG Lin-Jun;GU Bei-Bei. Characterization of Defects in Chemical Vapour Deposited Diamonds[J]. 中国物理快报, 2005, 22(5): 1264-1266.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2005/V22/I5/1264
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