GaN Schottky Barrier Diodes with High-Resistivity Edge Termination Formed by Boron Implantation
XU Wei-Zong, FU Li-Hua, LU Hai** , REN Fang-Fang, CHEN Dun-Jun, ZHANG Rong, ZHENG You-Dou
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093
Abstract ：Edge termination is one of the key technologies for fabricating high voltage Schottky barrier diodes (SBDs), which could effectively reduce the peak electric field along the Schottky contact edge and enhance the breakdown voltage. We adopt a high-resistivity ring structure as the edge termination for planar GaN SBDs. The edge termination is formed by self-aligned boron implantation on the edge of devices to form a highly damaged layer. In the implant dose and energy ranges studied experimentally, the GaN SBDs show improved blocking characteristics in terms of reverse leakage current and breakdown voltage at higher implant dose or implant energy. Meanwhile, the forward turn-on characteristics of the GaN SBDs exhibit no apparent change.
收稿日期: 2013-01-31
出版日期: 2013-05-31
:
73.40.Cg
(Contact resistance, contact potential)
73.61.Ey
(III-V semiconductors)
73.61.Jc
(Amorphous semiconductors; glasses)
73.25.+i
(Surface conductivity and carrier phenomena)
引用本文:
. [J]. 中国物理快报, 2013, 30(5): 57303-057303.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/30/5/057303
或
https://cpl.iphy.ac.cn/CN/Y2013/V30/I5/57303
[1] Ishida M, Uemoto Y, Ueda T, Tanaka T and Ueda D 2010 The 2010 International Power Electronics Conference p 10142012 IEEE Electron Device Lett. 33 357 2002 Appl. Phys. Lett. 81 79 2004 IEEE Electron Device Lett. 25 117 2011 IEEE Electron Device Lett. 32 300 2011 IEEE Electron Device Lett. 32 1370 2001 Appl. Phys. Lett. 79 1936 2001 Nucl. Instrum. Methods Phys. Res. Sect. B 178 200 2001 Phys. Rep. 351 349 2006 IEEE Electron Device Lett. 27 1 2004 Appl. Phys. Lett. 84 535 Silicon Carbide Power Devices (Singapore: World Scientific) p 44
[1]
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2013, Vol. 30 
