1Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 2Department of Physics, Southeast University, Nanjing 211189
Impact of Interfacial Trap Density of States on the Stability of Amorphous InGaZnO-Based Thin-Film Transistors
1Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 2Department of Physics, Southeast University, Nanjing 211189
Abstract：The impact of interfacial trap states on the stability of amorphous indium-gallium-zinc oxide thin film transistors is studied under positive gate bias stress. With increasing stress time, the device exhibits a large positive drift of threshold voltage while maintaining a stable sub-threshold swing and a constant field-effect mobility of channel electrons. The threshold voltage drift is explained by charge trapping at the high-density trap states near the channel/dielectric interface, which is confirmed by photo-excited charge-collection spectroscopy measurement.
(Surface states, band structure, electron density of states)
引用本文:
HUANG Xiao-Ming, WU Chen-Fei, LU Hai, XU Qing-Yu, ZHANG Rong, ZHENG You-Dou. Impact of Interfacial Trap Density of States on the Stability of Amorphous InGaZnO-Based Thin-Film Transistors[J]. 中国物理快报, 2012, 29(6): 67302-067302.
HUANG Xiao-Ming, WU Chen-Fei, LU Hai, XU Qing-Yu, ZHANG Rong, ZHENG You-Dou. Impact of Interfacial Trap Density of States on the Stability of Amorphous InGaZnO-Based Thin-Film Transistors. Chin. Phys. Lett., 2012, 29(6): 67302-067302.
2012, Vol. 29 
