Set Programming Method and Performance Improvement of Phase Change Random Access Memory Arrays
FAN Xi1,2,3, CHEN Hou-Peng1,2**, WANG Qian1,2, WANG Yue-Qing1,2,3, LV Shi-Long1,2, LIU Yan1,2, SONG Zhi-Tang1,2, FENG Gao-Ming4, LIU Bo1,2
1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 2Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 3University of Chinese Academy of Sciences, Beijing 100049 4United Laboratory, Semiconductor Manufacturing International Corporation, Shanghai 201203
Abstract：A novel slow-down set waveform is proposed to improve the set performance and a 1 kb phase change random access memory chip fabricated with a 130 nm CMOS technology is implemented to investigate the set performance by different set programming strategies based on this new set pulse. The amplitude difference (I1?I2) of the set pulse is proved to be a crucial parameter for set programming. We observe and analyze the cell characteristics with different I1?I2 by means of thermal simulations and high-resolution transmission electron microscopy, which reveal that an incomplete set programming will occur when the proposed slow-down pulse is set with an improperly high I1?I2. This will lead to an amorphous residue in the active region. We also discuss the programming method to avoid the set performance degradations.
(Nanoscale materials and structures: fabrication and characterization)
引用本文:
. [J]. 中国物理快报, 2015, 32(06): 68301-068301.
FAN Xi, CHEN Hou-Peng, WANG Qian, WANG Yue-Qing, LV Shi-Long, LIU Yan, SONG Zhi-Tang, FENG Gao-Ming, LIU Bo. Set Programming Method and Performance Improvement of Phase Change Random Access Memory Arrays. Chin. Phys. Lett., 2015, 32(06): 68301-068301.
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2015, Vol. 32 
