摘要A novel reconfigurable threshold logic element (TLE) using single-electron transistors (SETs) and metal-oxide-semiconductor (MOS) transistors is proposed. The proposed TLE is highly reconfigurable, which can perform all two-variable logic functions directly or indirectly, including OR, NOR, AND, NAND, XOR and XNOR. The reconfiguration of the TLE is realized by simply configuring the input bits without changing the device parameters. The design methodology can also be applied in the design of a multi-variable TLE. The reconfigurable TLE demonstrates good performance at room temperature with a compact structure and ultralow power dissipation. The reconfigurable TLE can be useful in high-density high-performance reconfigurable systems and artificial neural networks.
Abstract:A novel reconfigurable threshold logic element (TLE) using single-electron transistors (SETs) and metal-oxide-semiconductor (MOS) transistors is proposed. The proposed TLE is highly reconfigurable, which can perform all two-variable logic functions directly or indirectly, including OR, NOR, AND, NAND, XOR and XNOR. The reconfiguration of the TLE is realized by simply configuring the input bits without changing the device parameters. The design methodology can also be applied in the design of a multi-variable TLE. The reconfigurable TLE demonstrates good performance at room temperature with a compact structure and ultralow power dissipation. The reconfigurable TLE can be useful in high-density high-performance reconfigurable systems and artificial neural networks.
WEI Rong-Shan**, CHEN Jin-Feng, CHEN Shou-Chang, HE Ming-Hua. Reconfigurable Threshold Logic Element with SET and MOS Transistors[J]. 中国物理快报, 2012, 29(2): 28502-028502.
WEI Rong-Shan, CHEN Jin-Feng, CHEN Shou-Chang, HE Ming-Hua. Reconfigurable Threshold Logic Element with SET and MOS Transistors. Chin. Phys. Lett., 2012, 29(2): 28502-028502.
[1] Zheng Y X and Huang C 2009 IEEE Trans. Nanotechnol. 8 631
[2] Ono Y, Fujiwara A, Nishiguchi K, Inokawa H and Takahashi Y 2005 J. Appl. Phys. 97 031101
[3] Ouyang F P, Chen L J, Xiao J and Zhang H 2011 Chin. Phys. Lett. 28 047304
[4] Alireza K 2009 Chin. Phys. Lett. 26 060701
[5] Porod W, Lent C S, Bernstein G H, Orlov A O, Amlani I, Snider G L and Merz J L 1999 Int. J. Electron. 86 549
[6] Mazumder P, Kulkarni S, Bhattacharya M, Sun J P and Haddad G I 1998 Proc. IEEE 86 664
[7] Chen R H, Korotkov A N and Likharev K K 1996 Appl. Phys. Lett. 68 1954
[8] Lageweg C, Cotofana S and Vassiliadis S 2004 IEEE Trans. Nanotechnol. 3 237
[9] Beiu V, Quintana J M and Avedillo M J 2003 IEEE Trans. Neural Networks 14 1217
[10] Sui B C, Fang L, Chi Y Q and Zhang C 2010 IEEE Trans. Electron Devices 57 2251
[11] Inokawa H, Fujiwara A and Takahashi Y 2003 IEEE Trans. Electron Devices 50 462
[12] Inokawa H and Takahashi Y 2003 IEEE Trans. Electron Devices 50 455
[13] Zhao W and Cao Y 2006 IEEE Trans. Electron Devices 53 2816
[14] Ditto W L, Miliotis A, Murali K, Sinha S and Spano M L 2010 Chaos 20 037107