AlGaN/GaN Metal-Insulator-Semiconductor High Electron-Mobility Transistor Using a NbAlO/Al2O3 Laminated Dielectric by Atomic Layer Deposition
BI Zhi-Wei1, HAO Yue1**, FENG Qian1, GAO Zhi-Yuan2, ZHANG Jin-Cheng1, MAO Wei1, ZHANG Kai1, MA Xiao-Hua1, LIU Hong-Xia1, YANG Lin-An1, MEI Nan1, CHANG Yong-Ming1
1Key Lab of Fundamental Science for National on Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071 2Lab of Photoelectronic Technology, School of Electronic and Control Engineering, Beijing University of Technology, Beijing 100124
AlGaN/GaN Metal-Insulator-Semiconductor High Electron-Mobility Transistor Using a NbAlO/Al2O3 Laminated Dielectric by Atomic Layer Deposition
BI Zhi-Wei1, HAO Yue1**, FENG Qian1, GAO Zhi-Yuan2, ZHANG Jin-Cheng1, MAO Wei1, ZHANG Kai1, MA Xiao-Hua1, LIU Hong-Xia1, YANG Lin-An1, MEI Nan1, CHANG Yong-Ming1
1Key Lab of Fundamental Science for National on Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071 2Lab of Photoelectronic Technology, School of Electronic and Control Engineering, Beijing University of Technology, Beijing 100124
摘要We investigate the characteristics of AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with a NbAlO/Al2O3 lamination dielectric deposited by atomic layer deposition (ALD) as the gate insulator. A large gate voltage swing (GVS) of 3.96 V and a high breakdown voltage of −150 V for the MIS-HEMT were obtained. We present the gate leakage current mechanisms and analyze the reason for the reduction of the leakage current. Compared with traditional HEMTs, the maximum drain current is improved to 960 mA/mm, indicating that NbAlO layers could reduce the surface-related depletion of the channel layer and increase the sheet carrier concentration. In addition, the maximum oscillation frequency of 38.8 GHz shows that the NbAlO high-k dielectric can be considered as a potential gate oxide comparable with other dielectric insulators.
Abstract：We investigate the characteristics of AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with a NbAlO/Al2O3 lamination dielectric deposited by atomic layer deposition (ALD) as the gate insulator. A large gate voltage swing (GVS) of 3.96 V and a high breakdown voltage of −150 V for the MIS-HEMT were obtained. We present the gate leakage current mechanisms and analyze the reason for the reduction of the leakage current. Compared with traditional HEMTs, the maximum drain current is improved to 960 mA/mm, indicating that NbAlO layers could reduce the surface-related depletion of the channel layer and increase the sheet carrier concentration. In addition, the maximum oscillation frequency of 38.8 GHz shows that the NbAlO high-k dielectric can be considered as a potential gate oxide comparable with other dielectric insulators.
BI Zhi-Wei1, HAO Yue1**, FENG Qian1, GAO Zhi-Yuan2, ZHANG Jin-Cheng1, MAO Wei1, ZHANG Kai1, MA Xiao-Hua1, LIU Hong-Xia1, YANG Lin-An1, MEI Nan1, CHANG Yong-Ming1. AlGaN/GaN Metal-Insulator-Semiconductor High Electron-Mobility Transistor Using a NbAlO/Al2O3 Laminated Dielectric by Atomic Layer Deposition[J]. 中国物理快报, 2012, 29(2): 28501-028501.
BI Zhi-Wei, HAO Yue, FENG Qian, GAO Zhi-Yuan, ZHANG Jin-Cheng, MAO Wei, ZHANG Kai, MA Xiao-Hua, LIU Hong-Xia, YANG Lin-An, MEI Nan, CHANG Yong-Ming. AlGaN/GaN Metal-Insulator-Semiconductor High Electron-Mobility Transistor Using a NbAlO/Al2O3 Laminated Dielectric by Atomic Layer Deposition. Chin. Phys. Lett., 2012, 29(2): 28501-028501.
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