Reactive Ion Etching as Cleaning Method Post Chemical Mechanical Polishing for Phase Change Memory Device Support info


	2008, Vol. 25(2): 762-764 DOI:

	Reactive Ion Etching as Cleaning Method Post Chemical Mechanical Polishing for Phase Change Memory Device
	ZHONG Min^1,2, SONG Zhi-Tang¹, LIU Bo¹, FENG Song-Lin¹, CHEN Bomy³
	¹Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050²Graduate University of the Chinese Academy of Sciences, Beijing 100049³Silicon Storage Technology, Inc. 1171 Sonora Court, Sunnyvale, CA 94086, USA
	收稿日期 2007-09-10 修回日期 1900-01-01
	Supporting info


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