Abstract：A lateral current regulator diode (CRD) with field plates is proposed and experimentally demonstrated. The proposed CRD is based on the junction field-effect transistor (JFET) structure. A cathode field plate is adopted to alleviate the channel-length modulation effect and to improve the saturated $I$–$V$ characteristics. An anode field plate is induced to achieve a high breakdown voltage $V_{\rm B}$ of the CRD. The influence of the key device parameters on the $I$–$V$ characteristics of the lateral CRD are discussed. Experimental results show that the proposed CRD presents good $I$–$V$ characteristics with a high $V_{\rm B}$ about 180 V and a low knee voltage ($V_{\rm k})$ below 3 V. Furthermore, the proposed CRD has a negative temperature coefficient. The well characteristic of the proposed CRD makes it a cost-effective solution for light-emitting-diode lighting.
(Low-field transport and mobility; piezoresistance)
引用本文:
. [J]. 中国物理快报, 2016, 33(09): 97101-097101.
Yi-Tao He, Ming Qiao, Lu Li, Gang Dai, Bo Zhang, Zhao-Ji Li. A Lateral Regulator Diode with Field Plates for Light-Emitting-Diode Lighting. Chin. Phys. Lett., 2016, 33(09): 97101-097101.
2016, Vol. 33 
