1Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011 2Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011 3University of Chinese Academy of Sciences, Beijing 100049
Abstract：The influence of total dose irradiation on hot-carrier reliability of 65 nm n-type metal-oxide-semiconductor field-effect transistors (nMOSFETs) is investigated. Experimental results show that hot-carrier degradations on irradiated narrow channel nMOSFETs are greater than those without irradiation. The reason is attributed to radiation-induced charge trapping in shallow trench isolation (STI). The electric field in the pinch-off region of the nMOSFET is enhanced by radiation-induced charge trapping in STI, resulting in a more severe hot-carrier effect.
Menouni M, Barbero M, Bompard F, Bonacini S, Fougeron D, Gaglione R, Rozanov A, Valerio P and Wang A 2015 J. Instrum.10 C05009
[2]
Bonacini S, Valerio P, Avramidou R, Ballabriga R, Faccio F, Kloukinas K and Marchioro A 2012 J. Instrum.7 P01015
[3]
Stanislav T, Markus B, Jacopo F and Yannick W 2014 International Conference on Simulation of Semiconductor Processes and Devices (Yokohama 9–11 September 2014) p 89
2016, Vol. 33 
