Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100039
1Beijing Inorganic Crystal Laboratory, Beijing Glass Research Institute, Beijing 100062
Loss of Light Yield of Doped Lead Tungstate Crystals After Irradiation
Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100039
1Beijing Inorganic Crystal Laboratory, Beijing Glass Research Institute, Beijing 100062
Abstract： Loss of light yield of doped lead tungstate crystals after irradiation with a low dose rate has been observed. The La, Pr, and Y doping may improve radiation hardness, whereas Bi or Mo doping is harmful.
(X- and γ-ray sources, mirrors, gratings, and detectors)
引用本文:
HE Jing-tang;LÜYu-sheng;CHEN Duan-bao;LI Zu-hao;BIAN Jian-guo;ZHU Guo-yi;TANG Xiao-wei;CHEN Gang;ZHENG Lian-rong;CHEN Xiao-hong;REN Shao-xia. Loss of Light Yield of Doped Lead Tungstate Crystals After Irradiation[J]. 中国物理快报, 1999, 16(10): 745-746.
HE Jing-tang, LÜ, Yu-sheng, CHEN Duan-bao, LI Zu-hao, BIAN Jian-guo, ZHU Guo-yi, TANG Xiao-wei, CHEN Gang, ZHENG Lian-rong, CHEN Xiao-hong, REN Shao-xia. Loss of Light Yield of Doped Lead Tungstate Crystals After Irradiation. Chin. Phys. Lett., 1999, 16(10): 745-746.
1999, Vol. 16 
