Experimental Study of InP-Based InAlAs/InGaAs Quantum Well Infrared Photodetectors Operating at the 3-5 μm Wavelength Region
ZHANG Yong-gang, LI Ai-zhen, CHEN Jian-xin, YANG Quan-kui, REN Yao-cheng
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050
Experimental Study of InP-Based InAlAs/InGaAs Quantum Well Infrared Photodetectors Operating at the 3-5 μm Wavelength Region
ZHANG Yong-gang;LI Ai-zhen;CHEN Jian-xin;YANG Quan-kui;REN Yao-cheng
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050
关键词 ：
68.55.Bd ,
73.20.Dx ,
78.30.Fs
Abstract ： Gas source molecular beam epitaxy grown InP-based InAlAs/InGaAs quantum well infrared photodetectors operating at 3-5μm atmosphere window have been fabricated; their structural, electrical and optical characteristics have been investigated. The detectors show peak response wavelength λp at 3.85μm, with spectral width Δλ/λp of 4.6% and 7.2% at 1 and 5V bias voltages, respectively. Very low dark current of the detectors has been observed. At 2V bias the dark current is below 1nA at 77K and remains low value of 10nA at 150K. The background limited infrared performance temperature TBLIP as high as 165 K has been measured.
Key words ：
68.55.Bd
73.20.Dx
78.30.Fs
出版日期: 1999-10-01
引用本文:
ZHANG Yong-gang;LI Ai-zhen;CHEN Jian-xin;YANG Quan-kui;REN Yao-cheng
. Experimental Study of InP-Based InAlAs/InGaAs Quantum Well Infrared Photodetectors Operating at the 3-5 μm Wavelength Region[J]. 中国物理快报, 1999, 16(10): 747-749.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1999/V16/I10/747
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