Total Ionizing Dose Effects of 55-nm Silicon-Oxide-Nitride-Oxide-Silicon Charge Trapping Memory in Pulse and DC Modes
Mei Li1,2, Jin-Shun Bi1,2**, Yan-Nan Xu1,2, Bo Li1, Kai Xi1, Hai-Bin Wang3, Jing-Liu1, Jin-Li1, Lan-Long Ji1, Li Luo4, Ming Liu1
1Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 2University of Chinese Academy of Sciences, Beijing 100049 3School of Internet of Things Engineering, HoHai University, Changzhou 213022 4Beijing Jiaotong University, Beijing 100044
Abstract：The $^{60}$Co-$\gamma$ ray total ionizing dose radiation responses of 55-nm silicon-oxide-nitride-oxide-silicon (SONOS) memory cells in pulse mode (programmed/erased with pulse voltage) and dc mode (programmed/erased with direct voltage sweeping) are investigated. The threshold voltage and off-state current of memory cells before and after radiation are measured. The experimental results show that the memory cells in pulse mode have a better radiation-hard capability. The normalized memory window still remains at 60% for cells in dc mode and 76% for cells in pulse mode after 300 krad(Si) radiation. The charge loss process physical mechanisms of programmed SONOS devices during radiation are analyzed.
. [J]. 中国物理快报, 2018, 35(7): 78502-.
Mei Li, Jin-Shun Bi, Yan-Nan Xu, Bo Li, Kai Xi, Hai-Bin Wang, Jing-Liu, Jin-Li, Lan-Long Ji, Li Luo, Ming Liu. Total Ionizing Dose Effects of 55-nm Silicon-Oxide-Nitride-Oxide-Silicon Charge Trapping Memory in Pulse and DC Modes. Chin. Phys. Lett., 2018, 35(7): 78502-.
2018, Vol. 35 
