中国物理快报  2014, Vol. 31 Issue (12): 126101-126101    DOI: 10.1088/0256-307X/31/12/126101
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Enhanced Total Ionizing Dose Hardness of Deep Sub-Micron Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors by Applying Larger Back-Gate Voltage Stress
ZHENG Qi-Wen1,2,3, CUI Jiang-Wei1,2, YU Xue-Feng1,2**, GUO Qi1,2, ZHOU Hang1,2,3, REN Di-Yuan1,2
1Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011
2Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011
3University of Chinese Academy of Sciences, Beijing 100049