Radiation Resistance of Fluorine-Implanted PNP Using Gated-Controlled Lateral PNP Transistor Structure
Xin Wang1,2,3 , Wu Lu1,2** , Wu-Ying Ma1,2 , Qi Guo1,2 , Zhi-Kuan Wang4 , Cheng-Fa He1,2 , Mo-Han Liu1,2,3 , Xiao-Long Li1,2,3 , Jin-Cheng Jia1,2,3
1 Key Laboratory of Functional Materials and Devices for Special Environments, Chinese Academy of Sciences, Urumqi 8300112 Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 8300113 University of Chinese Academy of Sciences, Beijing 1000494 State Key Laboratory of Analog Integrated Circuit, Chongqing 400060
Abstract ：The radiation damage responses of fluorinated and non-fluorinated lateral PNP transistors are studied with specially designed gated-controlled lateral PNP transistors that allow for the extraction of the oxide trapped charge ($N_{\rm ot}$) and interface trap ($N_{\rm it}$) densities. All the samples are exposed in the Co-60$\gamma $ ray with the dose rate of 0.5 Gy(Si)/s. After the irradiation, the buildup of $N_{\rm ot}$ and $N_{\rm it}$ of the samples with total dose is investigated by the gate sweep test technique. The results show that the radiation resistance of fluorinated lateral PNP transistors is significantly enhanced compared with the non-fluorinated ones.
收稿日期: 2016-03-31
出版日期: 2016-08-31
:
61.80.Ed
(γ-ray effects)
77.84.Bw
(Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)
85.30.Tv
(Field effect devices)
73.25.+i
(Surface conductivity and carrier phenomena)
61.82.Fk
(Semiconductors)
引用本文:
. [J]. 中国物理快报, 2016, 33(08): 86101-086101.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/33/8/086101
或
https://cpl.iphy.ac.cn/CN/Y2016/V33/I08/86101
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2016, Vol. 33 
