1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 2University of Chinese Academy of Sciences, Beijing 100049
Abstract：The body current lowering effect of 130 nm partially depleted silicon-on-insulator (PDSOI) input/output (I/O) n-type metal-oxide-semiconductor field-effect transistors (NMOSFETs) induced by total-ionizing dose is observed and analyzed. The decay tendency of current ratio of body current and drain current $I_{\rm b}/I_{\rm d}$ is also investigated. Theoretical analysis and TCAD simulation results indicate that the physical mechanism of body current lowering effect is the reduction of maximum lateral electric field of the pinch-off region induced by the trapped charges in the buried oxide layer (BOX). The positive charges in the BOX layer can counteract the maximum lateral electric field to some extent.
2017, Vol. 34 
