High-Pressure Preparation of High-Density Cu$_{2}$ZnSnS$_{4}$ Materials
Yi-Ming Li1,2 , Li-Xia Qiu1 , Zhan-Hui Ding1** , Yong-Feng Li1 , Bin Yao1,2** , Zhen-Yu Xiao1 , Pin-Wen Zhu1
1 State Key Laboratory of Superhard Material and College of Physics, Jilin University, Changchun 1300122 Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012
Abstract ：High-density Cu$_{2}$ZnSnS$_{4 }$ (CZTS) materials are prepared via the mechanical alloying and high pressure sintering method using Cu$_{2}$S, ZnS and SnS$_{2}$ as the raw materials. The morphological, structural, compositional and electrical properties of the materials are investigated by using x-ray diffraction, scanning electron microscopy, and energy dispersive x-ray spectroscopy, as well as by the Raman scattering and the Hall Effect measurements. The CZTS synthesized under 5 GPa and 800$^\circ\!$C shows a p-type conductivity, with a resistivity of $9.69\times10^{-2}$ $\Omega \cdot$cm and a carrier concentration of $1.45\times10^{20}$ cm$^{-3}$. It is contributed to by the large grains in the materials reducing the grain boundaries, thus effectively reducing the recombination of the charge carriers.
收稿日期: 2016-03-09
出版日期: 2016-08-01
:
61.82.Fk
(Semiconductors)
81.40.Vw
(Pressure treatment)
87.64.Bx
(Electron, neutron and x-ray diffraction and scattering)
引用本文:
. [J]. 中国物理快报, 2016, 33(07): 76101-076101.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/33/7/076101
或
https://cpl.iphy.ac.cn/CN/Y2016/V33/I07/76101
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2016, Vol. 33 
