Fabrication and Characterization of 1700 V 4H-SiC Vertical Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistors
SHEN Hua-Jun1,2**, TANG Ya-Chao1,2,3, PENG Zhao-Yang1,2, DENG Xiao-Chuan3, BAI Yun1,2, WANG Yi-Yu4, LI Cheng-Zhan4, LIU Ke-An4, LIU Xin-Yu1,2
1Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 2Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 3State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 4Zhuzhou CSR Times Electric Co., LTD, Zhuzhou 412001
Abstract：The fabrication and characterization of 1700 V 7 A 4H-SiC vertical double-implanted metal-oxide-semiconductor field-effect transistors (VDMOSFETs) are reported. The drift layer is 17 μm in thickness with 5×1015 cm?3 n-type doping, and the channel length is 1 μm. The MOSFETs show a peak mobility of 17 cm2/V?s and a typical threshold voltage of 3 V. The active area of 0.028 cm2 delivers a forward drain current of 7 A at VGS=22 V and VDS=15 V. The specific on-resistance (Ron,sp) is 18 mΩ?cm2 at VGS=22 V and the blocking voltage is 1975 V (IDS<100 nA) at VGS=0 V.
. [J]. 中国物理快报, 2015, 32(12): 127101-127101.
SHEN Hua-Jun, TANG Ya-Chao, PENG Zhao-Yang, DENG Xiao-Chuan, BAI Yun, WANG Yi-Yu, LI Cheng-Zhan, LIU Ke-An, LIU Xin-Yu. Fabrication and Characterization of 1700 V 4H-SiC Vertical Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistors. Chin. Phys. Lett., 2015, 32(12): 127101-127101.
2015, Vol. 32 
