Transport through a Single Barrier on Monolayer MoS2
CHENG Fang1**, REN Yi1, SUN Jin-Fang2
1Department of Physics and Electronic Science, Changsha University of Science and Technology, Changsha 410004 2College of Mechanical and Electrical Engineering, Anhui Polytechnic University, Wuhu 241000
Abstract：We investigate theoretically quantum transport through a single barrier on monolayer MoS2. It is found that the transmission properties of spin-up (down) electrons in the K valley are the same as spin-down (up) electrons in the K' valley due to the time-reversal symmetry. Generally, the transmission probability for transport through an n–n–n (or p–p–p) junction is an oscillating function of incident angle, barrier height, as well as the incident energy of electrons. The present transmission shows a directional-dependent tunneling depending sensitively on the spin orientation for transport through a p–p–p junction. While for transport through an n–p-n junction, monolayers of MoS2 become opaque for almost all angles of incident θ0 except for θ0～θ0m (the resonant angles). The positions and numbers of resonant peaks in the transmission are determined by the distance between the two barriers and the spin orientation. The conductance in such systems can be tuned significantly by changing the height of the electric potential.
. [J]. 中国物理快报, 2015, 32(10): 107301-107301.
CHENG Fang, REN Yi, SUN Jin-Fang. Transport through a Single Barrier on Monolayer MoS2. Chin. Phys. Lett., 2015, 32(10): 107301-107301.
2015, Vol. 32 
