Electrically Tunable Energy Bandgap in Dual-Gated Ultra-Thin Black Phosphorus Field Effect Transistors
Shi-Li Yan1 , Zhi-Jian Xie1 , Jian-Hao Chen1,3** , Takashi Taniguchi2 , Kenji Watanabe2
1 International Center for Quantum Materials, Peking University, Beijing 1008712 High Pressure Group, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan3 Collaborative Innovation Center of Quantum Matter, Beijing 100871
Abstract ：The energy bandgap is an intrinsic character of semiconductors, which largely determines their properties. The ability to continuously and reversibly tune the bandgap of a single device during real time operation is of great importance not only to device physics but also to technological applications. Here we demonstrate a widely tunable bandgap of few-layer black phosphorus (BP) by the application of vertical electric field in dual-gated BP field-effect transistors. A total bandgap reduction of 124 meV is observed when the electrical displacement field is increased from 0.10 V/nm to 0.83 V/nm. Our results suggest appealing potential for few-layer BP as a tunable bandgap material in infrared optoelectronics, thermoelectric power generation and thermal imaging.
收稿日期: 2017-03-10
出版日期: 2017-03-21
:
73.63.-b
(Electronic transport in nanoscale materials and structures)
73.20.At
(Surface states, band structure, electron density of states)
85.35.-p
(Nanoelectronic devices)
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2017, Vol. 34 
