Abstract：A high microwave performance enhancement-mode (E-mode) In0.4Ga0.6As channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a Si-doped In0.49Ga0.51P interfacial layer is fabricated. A 0.8-μm-gate-length In0.4Ga0.6As MOSFET with a 5-nm Al2O3 dielectric layer provides a current gain cutoff frequency of 16.7 GHz and a maximum oscillation frequency of 52 GHz. A semi-empirical small-signal-parameter extraction technique accounting for the low frequency anomaly of this MOSFET device is described, which is based on on-wafer S-parameter measurements. Excellent agreement between measured and simulated scattering parameters as well as the physically realistic circuit elements demonstrates the validity of this approach.
. [J]. 中国物理快报, 2013, 30(8): 87304-087304.
LIU Gui-Ming, CHANG Hu-Dong, SUN Bing, LIU Hong-Gang. The Microwave Characteristics of an In0.4Ga0.6As Metal-Oxide-Semiconductor Field-Effect Transistor with an In0.49Ga0.51P Interfacial Layer. Chin. Phys. Lett., 2013, 30(8): 87304-087304.
2013, Vol. 30 
