摘要An n-TiO2/n−Si isotype heterojunction is fabricated by depositing TiO2 thin films onto n−Si substrates. Obvious photovoltaic behaviors are observed in this isotype heterojunction. The open circuit voltage and short circuit current of the heterojunction can reach 123 mV and 20 µA/cm2, respectively. The mechanism for the photovoltaic behaviors can be understood in terms of the band alignment of the heterojunction. The results reported may provide a feasible route to easily available and low-cost isotyped photovoltaic devices.
Abstract：An n-TiO2/n−Si isotype heterojunction is fabricated by depositing TiO2 thin films onto n−Si substrates. Obvious photovoltaic behaviors are observed in this isotype heterojunction. The open circuit voltage and short circuit current of the heterojunction can reach 123 mV and 20 µA/cm2, respectively. The mechanism for the photovoltaic behaviors can be understood in terms of the band alignment of the heterojunction. The results reported may provide a feasible route to easily available and low-cost isotyped photovoltaic devices.
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2011, Vol. 28 
