Influence of Oxygen in Sputtering and Annealing Processes on Properties of ZnO:Ag Films Deposited by rf Sputtering
DUAN Li1**, GAO Wei2
1School of Materials Science and Engineering, Chang'an University, Xi'an 710064 2Department of Chemical and Materials Engineering, The University of Auckland, Private Bag 92019, Auckland, New Zealand
Influence of Oxygen in Sputtering and Annealing Processes on Properties of ZnO:Ag Films Deposited by rf Sputtering
DUAN Li1**, GAO Wei2
1School of Materials Science and Engineering, Chang'an University, Xi'an 710064 2Department of Chemical and Materials Engineering, The University of Auckland, Private Bag 92019, Auckland, New Zealand
摘要ZnO:Ag films were prepared by rf sputtering on Si substrates. A detailed study on as-grown and annealed films was carried out using x-ray diffraction (XRD). The results indicate that the film crystalline quality and the Ag doping efficiency were both influenced by oxygen in the sputtering and annealing atmosphere. The optimum conditions are found. Ultraviolet and green emissions of annealed ZnO:Ag films were observed at room temperature. Photoluminescence results show that oxygen in annealing atmosphere reduces the deep-level defects in ZnO:Ag and increases the film quality.
Abstract：ZnO:Ag films were prepared by rf sputtering on Si substrates. A detailed study on as-grown and annealed films was carried out using x-ray diffraction (XRD). The results indicate that the film crystalline quality and the Ag doping efficiency were both influenced by oxygen in the sputtering and annealing atmosphere. The optimum conditions are found. Ultraviolet and green emissions of annealed ZnO:Ag films were observed at room temperature. Photoluminescence results show that oxygen in annealing atmosphere reduces the deep-level defects in ZnO:Ag and increases the film quality.
(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
引用本文:
DUAN Li**;GAO Wei
. Influence of Oxygen in Sputtering and Annealing Processes on Properties of ZnO:Ag Films Deposited by rf Sputtering[J]. 中国物理快报, 2011, 28(3): 36105-036105.
DUAN Li**, GAO Wei
. Influence of Oxygen in Sputtering and Annealing Processes on Properties of ZnO:Ag Films Deposited by rf Sputtering. Chin. Phys. Lett., 2011, 28(3): 36105-036105.
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