Non-UV Photoelectric Properties of the Ni/n-Si/N+
LI Lian-Bi1,2 , CHEN Zhi-Ming1** , REN Zhan-Qiang1 , GAO Zhan-Jun1
1 Department of Electronic Engineering, Xi'an University of Technology, Xi'an 7100482 School of Science, Xi'an Polytechnic University, Xi'an 710048
Abstract ：The energy-band structure and non-ultraviolet photoelectric properties of a Ni/n-Si/N+ J –V measurements indicate that the device has good rectifying behavior with a rectification ratio up to 200 at 5 V, and the turn-on voltage is about 0.7 V. Under non-ultraviolet illumination of 0.6 W/cm2 , the device demonstrates a significant photoelectric response with a photocurrent density of 2.9 mA/cm2 and an open-circuit voltage of 63.0 mV. Non-ultraviolet operation of the SiC-based photoelectric device is initially realized.
收稿日期: 2013-04-23
出版日期: 2013-11-21
:
73.40.Lq
(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
85.60.Dw
(Photodiodes; phototransistors; photoresistors)
81.15.Gh
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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2013, Vol. 30 
