摘要A prototype ZnO:Al/amorphous-FeSi2 heterojunction was successfully prepared on a glass substrate by magnetron sputtering at room temperature. The structural and electrical properties of as−deposited FeSi2 thin films were investigated using x−ray diffraction, Raman scattering, resistivity, and carrier lifetime measurement. The FeSi2 thin film showed an amorphous phase with resistivity of 9.685 Ω⋅cm and carrier lifetime of 9.5 µs. The prototype ZnO:Al/amorphous−FeSi2 heterojunction exhibited a rectifying property of the diode from the dark current−voltage characteristic. This propert was evaluated using the shunt resistance and diode ideal factor. The experimental results suggest that the amorphous-FeSi2 thin film has promising applications in heterojunction devices with low thermal budget and low product cost.
Abstract：A prototype ZnO:Al/amorphous-FeSi2 heterojunction was successfully prepared on a glass substrate by magnetron sputtering at room temperature. The structural and electrical properties of as−deposited FeSi2 thin films were investigated using x−ray diffraction, Raman scattering, resistivity, and carrier lifetime measurement. The FeSi2 thin film showed an amorphous phase with resistivity of 9.685 Ω⋅cm and carrier lifetime of 9.5 µs. The prototype ZnO:Al/amorphous−FeSi2 heterojunction exhibited a rectifying property of the diode from the dark current−voltage characteristic. This propert was evaluated using the shunt resistance and diode ideal factor. The experimental results suggest that the amorphous-FeSi2 thin film has promising applications in heterojunction devices with low thermal budget and low product cost.
XU Jia-Xiong;YAO Ruo-He*;LIU Yu-Rong
. Fabrication of a ZnO:Al/Amorphous-FeSi2 Heterojunction at Room Temperature[J]. 中国物理快报, 2011, 28(10): 107304-107304.
XU Jia-Xiong, YAO Ruo-He*, LIU Yu-Rong
. Fabrication of a ZnO:Al/Amorphous-FeSi2 Heterojunction at Room Temperature. Chin. Phys. Lett., 2011, 28(10): 107304-107304.
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