摘要A heterostructure composed of a Bi2Fe4O9 film and an n−type Si substrate is fabricated. The characteristics of leakage current density versus electric field are investigated and the leakage current density is about 6×10−6 A/cm2 at an electric field of 200 kV/cm at 300 K. A strong photovoltaic effect is observed when the heterostructure is exposed to a laser pulse with a wavelength of 532 nm and a power of 6 mW/mm2. It is found that the peak photovoltages initially increase with decreasing temperature, followed by a decrease at T<210 K. These results reveal that the heterostructure is a promising candidate for photovoltaic devices that are compatible with Si integrated circuits.
Abstract：A heterostructure composed of a Bi2Fe4O9 film and an n−type Si substrate is fabricated. The characteristics of leakage current density versus electric field are investigated and the leakage current density is about 6×10−6 A/cm2 at an electric field of 200 kV/cm at 300 K. A strong photovoltaic effect is observed when the heterostructure is exposed to a laser pulse with a wavelength of 532 nm and a power of 6 mW/mm2. It is found that the peak photovoltages initially increase with decreasing temperature, followed by a decrease at T<210 K. These results reveal that the heterostructure is a promising candidate for photovoltaic devices that are compatible with Si integrated circuits.
JIN Ke-Xin**;LUO Bing-Cheng;ZHAO Sheng-Gui;WANG Jian-Yuan;CHEN Chang-Le
. Leakage Current and Photovoltaic Properties in a Bi2Fe4O9/Si Heterostructure[J]. 中国物理快报, 2011, 28(8): 87301-087301.
JIN Ke-Xin**, LUO Bing-Cheng, ZHAO Sheng-Gui, WANG Jian-Yuan, CHEN Chang-Le
. Leakage Current and Photovoltaic Properties in a Bi2Fe4O9/Si Heterostructure. Chin. Phys. Lett., 2011, 28(8): 87301-087301.
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2011, Vol. 28 
