摘要An n-ZnS/p-Si heterojunction was fabricated by using the rf magnetron sputtering method. The band gap of the ZnS film is about 3.63 eV. Current-voltage (I–V) characteristics of the ZnS/Si heterojunction are examined and the results show the distinct rectifying characteristics with a turn-on voltage of about 1.8 V. The UV (330 nm) and visible (450 nm) photoresponse properties of the heterojunction are also investigated, which demonstrates the potential of such an n-ZnS/p-Si heterojunction for detecting both UV and visible light.
Abstract：An n-ZnS/p-Si heterojunction was fabricated by using the rf magnetron sputtering method. The band gap of the ZnS film is about 3.63 eV. Current-voltage (I–V) characteristics of the ZnS/Si heterojunction are examined and the results show the distinct rectifying characteristics with a turn-on voltage of about 1.8 V. The UV (330 nm) and visible (450 nm) photoresponse properties of the heterojunction are also investigated, which demonstrates the potential of such an n-ZnS/p-Si heterojunction for detecting both UV and visible light.
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