中国物理快报  2011, Vol. 28 Issue (12): 127203-127203    DOI: 10.1088/0256-307X/28/12/127203
  CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 本期目录 | 过刊浏览 | 高级检索 |
Improved Performance of Pentacene Organic Field-Effect Transistors by Inserting a V2O5 Metal Oxide Layer
ZHAO Geng1, CHENG Xiao-Man1,2**, TIAN Hai-Jun2, DU Bo-Qun1, LIANG Xiao-Yu2
1School of Science, Tianjin University of Technology, Tianjin 300384
2Institute of Material Physics, Key Laboratory of Display Material and Photoelectric Devices (Ministry of Education), and Tianjin Key Laboratory of Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384)
Improved Performance of Pentacene Organic Field-Effect Transistors by Inserting a V2O5 Metal Oxide Layer
ZHAO Geng1, CHENG Xiao-Man1,2**, TIAN Hai-Jun2, DU Bo-Qun1, LIANG Xiao-Yu2
1School of Science, Tianjin University of Technology, Tianjin 300384
2Institute of Material Physics, Key Laboratory of Display Material and Photoelectric Devices (Ministry of Education), and Tianjin Key Laboratory of Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384)