Laser-Induced Single Event Transients in Local Oxidation of Silicon and Deep Trench Isolation Silicon-Germanium Heterojunction Bipolar Transistors
LI Pei1,2, GUO Hong-Xia1,2,3**, GUO Qi1,2, ZHANG Jin-Xin4, WEI Ying1,2,
1Key Laboratory of Functional Materials and Devices for Special Environments of CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011 2University of Chinese Academy of Sciences, Beijing 100049 3Northwest Institution of Nuclear Technology, Xi'an 710024 4School of Nuclear Science and Tecnology, Xi'an Jiao Tong University, Xi'an 710049
Abstract：We present a study on the single event transient (SET) induced by a pulsed laser in different silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) with the structure of local oxidation of silicon (LOCOS) and deep trench isolation (DTI). The experimental results are discussed in detail and it is demonstrated that a SiGe HBT with the structure of LOCOS is more sensitive than the DTI SiGe HBT in the SET. Because of the limitation of the DTI structure, the charge collection of diffusion in the DTI SiGe HBT is less than that of the LOCOS SiGe HBT. The SET sensitive area of the LOCOS SiGe HBT is located in the collector-substrate (C/S) junction, while the sensitive area of the DTI SiGe HBT is located near to the collector electrodes.
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2015, Vol. 32 
