Effect of Dopant Concentration in a Base Layer on Photocurrent–Voltage Characteristics of Photovoltaic Power Converters
Wen-Xue Huo1,2,3, Ming-Long Zhao1,2,3, Xian-Sheng Tang1,2,3, Li-Li Han1,2,3, Zhen Deng1,3,5, Yang Jiang1,3, Wen-Xin Wang1,3,4, Hong Chen1,3,4, Chun-Hua Du1,3,5*, and Hai-Qiang Jia1,3,4*
1Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China 2University of Chinese Academy of Sciences, Beijing 100049, China 3Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China 4Songshan Lake Materials Laboratory, Dongguan 523808, China 5The Yangtze River Delta Physics Research Center, Liyang 213300, China
Abstract：It is known that the p–n junction of an absorption region is a crucial part for power conversion efficiency of photovoltaic power converters. We fabricate four samples with different dopant concentrations in base layers. The dependences of power conversion efficiency and fill factor on input power are displayed by photocurrent–voltage measurement. Photoluminescence characteristics under open circuit and connected circuit conditions are also studied. It is found that the status of p–n junction matching is the critical factor in affecting the power conversion efficiency. In addition, series resistance of photovoltaic power converters impairs the efficiency especially at high input powers. Both the key factors need to be considered to obtain high efficiency, and this work provides promising guidance on designing photovoltaic power converters.
. [J]. 中国物理快报, 2020, 37(8): 87802-.
Wen-Xue Huo, Ming-Long Zhao, Xian-Sheng Tang, Li-Li Han, Zhen Deng, Yang Jiang, Wen-Xin Wang, Hong Chen, Chun-Hua Du, and Hai-Qiang Jia. Effect of Dopant Concentration in a Base Layer on Photocurrent–Voltage Characteristics of Photovoltaic Power Converters. Chin. Phys. Lett., 2020, 37(8): 87802-.
2020, Vol. 37 
