Heavy Ion and Laser Microbeam Induced Current Transients in SiGe Heterojunction Bipolar Transistor
Pei Li1 , Chao-Hui He1** , Gang Guo2 , Hong-Xia Guo3 , Feng-Qi Zhang3 , Jin-Xin Zhang1 , Shu-Ting Shi2
1 School of Nuclear Science and Technology, Xi'an Jiaotong University, Xi'an 7100492 China Institute of Atomic Energy, Beijing 1024133 Northwest Institution of Nuclear Technology, Xi'an 710024
Abstract ：Silicon-germanium (SiGe) hetero-junction bipolar transistor current transients induced by pulse laser and heavy iron are measured using a real-time digital oscilloscope. These transients induced by pulse laser and heavy iron exhibit the same waveform and charge collection time except for the amplitude of peak current. Different laser energies and voltage biases under heavy ion irradiation also have impact on current transient, whereas the waveform remains unchanged. The position-correlated current transients suggest that the nature of the current transient is controlled by the behavior of the C/S junction.
收稿日期: 2017-06-15
出版日期: 2017-09-27
:
85.30.Pq
(Bipolar transistors)
61.80.Az
(Theory and models of radiation effects)
73.40.Lq
(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
61.80.-x
(Physical radiation effects, radiation damage)
引用本文:
. [J]. 中国物理快报, 2017, 34(10): 108501-.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/34/10/108501
或
https://cpl.iphy.ac.cn/CN/Y2017/V34/I10/108501
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2017, Vol. 34 
