In-Situ SRPES Study on the Band Alignment of (0001)CdS/CdTe Heterojunction

doi:10.1088/0256-307X/29/5/057301

摘要
图/表
参考文献
相关文章 (15)

全文: PDF (630 KB) HTML (1 KB)
输出: BibTeX | EndNote (RIS)

摘要 The band alignment of a (0001)CdS/CdTe heterojunction is in situ studied by synchrotron radiation photoemission spectroscopy (SRPES). The heterojunction is formed through stepwise deposition of a CdTe film on a wurtzite (0001)CdS single crystalline substrate via molecular beam epitaxy. CdS shows an upward band bending of 0.55 eV, the valence band offset ΔE_V is calculated to be 0.65 eV and the conduction band offset ΔE_C is 0.31 eV. The interfacial band alignment is sketched to display type-I band alignment.

	服务

	把本文推荐给朋友
	加入我的书架
	加入引用管理器
	E-mail Alert
	RSS
	作者相关文章
	GAO Jun-Ning
	JIE Wan-Qi
	YUAN Yan-Yan
	ZHA Gang-Qiang
	XU Ling-Yan
	WU Heng
	WANG Ya-Bin
	YU Hui
	ZHU Jun-Fa

Abstract：The band alignment of a (0001)CdS/CdTe heterojunction is in situ studied by synchrotron radiation photoemission spectroscopy (SRPES). The heterojunction is formed through stepwise deposition of a CdTe film on a wurtzite (0001)CdS single crystalline substrate via molecular beam epitaxy. CdS shows an upward band bending of 0.55 eV, the valence band offset ΔE_V is calculated to be 0.65 eV and the conduction band offset ΔE_C is 0.31 eV. The interfacial band alignment is sketched to display type-I band alignment.

收稿日期: 2012-02-27 出版日期: 2012-04-30

:	73.20.At	(Surface states, band structure, electron density of states)
	73.40.Lq	(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	73.61.Ga	(II-VI semiconductors)

引用本文:

GAO Jun-Ning,JIE Wan-Qi**,YUAN Yan-Yan,ZHA Gang-Qiang,XU Ling-Yan,WU Heng,WANG Ya-Bin,YU Hui,ZHU Jun-Fa. In-Situ SRPES Study on the Band Alignment of (0001)CdS/CdTe Heterojunction[J]. 中国物理快报, 2012, 29(5): 57301-057301.
GAO Jun-Ning,JIE Wan-Qi**,YUAN Yan-Yan,ZHA Gang-Qiang,XU Ling-Yan,WU Heng,WANG Ya-Bin,YU Hui,ZHU Jun-Fa. In-Situ SRPES Study on the Band Alignment of (0001)CdS/CdTe Heterojunction. Chin. Phys. Lett., 2012, 29(5): 57301-057301.

链接本文:

https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/29/5/057301 或 https://cpl.iphy.ac.cn/CN/Y2012/V29/I5/57301

[1]	. [J]. 中国物理快报, 2023, 40(3): 37102-.
[2]	. [J]. 中国物理快报, 2022, 39(11): 118501-.
[3]	. [J]. 中国物理快报, 2022, 39(6): 67402-.
[4]	. [J]. 中国物理快报, 2022, 39(5): 57301-.
[5]	. [J]. 中国物理快报, 2021, 38(11): 117301-.
[6]	. [J]. 中国物理快报, 2021, 38(7): 77105-.
[7]	. [J]. 中国物理快报, 2021, 38(7): 77301-.
[8]	. [J]. 中国物理快报, 2021, 38(5): 57307-057307.
[9]	. [J]. 中国物理快报, 2021, 38(5): 57306-.
[10]	. [J]. 中国物理快报, 2020, 37(12): 127102-.
[11]	. [J]. 中国物理快报, 2020, 37(11): 117301-.
[12]	. [J]. 中国物理快报, 2020, 37(11): 117303-.
[13]	. [J]. 中国物理快报, 2020, 37(10): 107301-.
[14]	. [J]. 中国物理快报, 2020, 37(8): 87102-.
[15]	. [J]. 中国物理快报, 2020, 37(8): 87103-.