Chemical Vapour Deposition Graphene Radio-Frequency Field-Effect Transistors
MA Peng1,JIN Zhi1**,GUO Jian-Nan1,PAN Hong-Liang1,LIU Xin-Yu1,YE Tian-Chun1,WANG Hong2,WANG Guan-Zhong2
1Department of Microwave IC, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 2Hefei National Laboratory for Physical Sciences at Microscale, and Department of Physics, University of Science and Technology of China, Hefei 230026
Chemical Vapour Deposition Graphene Radio-Frequency Field-Effect Transistors
MA Peng1,JIN Zhi1**,GUO Jian-Nan1,PAN Hong-Liang1,LIU Xin-Yu1,YE Tian-Chun1,WANG Hong2,WANG Guan-Zhong2
1Department of Microwave IC, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 2Hefei National Laboratory for Physical Sciences at Microscale, and Department of Physics, University of Science and Technology of China, Hefei 230026
摘要We report the dc and rf performance of graphene rf field-effect transistors, where the graphene films are grown on copper by using the chemical vapour deposition (CVD) method and transferred to SiO2/Si substrates. Composite materials, benzocyclobutene and atomic layer deposition Al2O3 are used as the gate dielectrics. The observation of n− and p-type transitions verifies the ambipolar characteristics in the graphene layers. While the intrinsic carrier mobility of CVD graphene is extracted to be 1200 cm2/V⋅s, the parasitic series resistances are demonstrated to have a serious impact on device performance. With a gate length of 1 µm and an extrinsic transconductance of 72 mS/mm, a cutoff frequency of 6.6 GHz and a maximum oscillation frequency of 8.8 GHz are measured for the transistors, illustrating the potential of the CVD graphene for rf applications.
Abstract：We report the dc and rf performance of graphene rf field-effect transistors, where the graphene films are grown on copper by using the chemical vapour deposition (CVD) method and transferred to SiO2/Si substrates. Composite materials, benzocyclobutene and atomic layer deposition Al2O3 are used as the gate dielectrics. The observation of n− and p-type transitions verifies the ambipolar characteristics in the graphene layers. While the intrinsic carrier mobility of CVD graphene is extracted to be 1200 cm2/V⋅s, the parasitic series resistances are demonstrated to have a serious impact on device performance. With a gate length of 1 µm and an extrinsic transconductance of 72 mS/mm, a cutoff frequency of 6.6 GHz and a maximum oscillation frequency of 8.8 GHz are measured for the transistors, illustrating the potential of the CVD graphene for rf applications.
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2012, Vol. 29 
