A High Breakdown Voltage AlGaN/GaN MOSHEMT Using Thermal Oxidized Al-Ti as the Gate Insulator
ZHOU Bin1, WANG Jin-Yan1**, MENG Di1, LIN Shu-Xun2, FANG Min1, DONG Zhi-Hua2, YU Min1, HAO Yi-Long1, Cheng P. WEN1
1Institute of Microelectronics, Peking University, Beijing 100871 2 Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123
A High Breakdown Voltage AlGaN/GaN MOSHEMT Using Thermal Oxidized Al-Ti as the Gate Insulator
ZHOU Bin1, WANG Jin-Yan1**, MENG Di1, LIN Shu-Xun2, FANG Min1, DONG Zhi-Hua2, YU Min1, HAO Yi-Long1, Cheng P. WEN1
1Institute of Microelectronics, Peking University, Beijing 100871 2 Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123
摘要Direct oxidation of composite Al/Ti metal films as gate insulators for AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs/HEMTs) is successfully realized. The devices fabricated with this novel process exhibit four orders of magnitude reduction in gate leakage current and remarkable breakdown voltage (V br=490 V vs 88 V for normal HEMT) improvement, compared with conventional Schottky-gate HEMTs. Furthermore, the transconductance of the MOSHEMT is only slightly lower (2.6%) than that of Schottky-gate HEMTs and have a wider full width of half maximum. The notable enhancement in device performance renders this new process highly promising for GaN-based microwave power amplifier applications in communication and radar systems.
Abstract：Direct oxidation of composite Al/Ti metal films as gate insulators for AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs/HEMTs) is successfully realized. The devices fabricated with this novel process exhibit four orders of magnitude reduction in gate leakage current and remarkable breakdown voltage (V br=490 V vs 88 V for normal HEMT) improvement, compared with conventional Schottky-gate HEMTs. Furthermore, the transconductance of the MOSHEMT is only slightly lower (2.6%) than that of Schottky-gate HEMTs and have a wider full width of half maximum. The notable enhancement in device performance renders this new process highly promising for GaN-based microwave power amplifier applications in communication and radar systems.
(Semiconductor-device characterization, design, and modeling)
引用本文:
ZHOU Bin;WANG Jin-Yan**;MENG Di;LIN Shu-Xun;FANG Min;DONG Zhi-Hua;YU Min;HAO Yi-Long;Cheng P. WEN
. A High Breakdown Voltage AlGaN/GaN MOSHEMT Using Thermal Oxidized Al-Ti as the Gate Insulator[J]. 中国物理快报, 2011, 28(10): 107303-107303.
ZHOU Bin, WANG Jin-Yan**, MENG Di, LIN Shu-Xun, FANG Min, DONG Zhi-Hua, YU Min, HAO Yi-Long, Cheng P. WEN
. A High Breakdown Voltage AlGaN/GaN MOSHEMT Using Thermal Oxidized Al-Ti as the Gate Insulator. Chin. Phys. Lett., 2011, 28(10): 107303-107303.
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2011, Vol. 28 
