Common Base Four-Finger InGaAs/InP Double Heterojunction Bipolar Transistor with Maximum Oscillation Frequency 535 GHz
NIU Bin12, WANG Yuan1, CHENG Wei1**, XIE Zi-Li2, LU Hai-Yan1, CHANG Long1, XIE Jun-Ling1
1Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016 2Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093
Abstract:A common base four-finger InGaAs/InP double heterojunction bipolar transistor with 535 GHz fmax by using the 0.5 μm emitter technology is fabricated. Multi-finger design is used to increase the input current. Common base configuration is compared with common emitter configuration, and shows a smaller K factor at high frequency span, indicating a larger breakpoint frequency of maximum stable gain/maximum available gain (MSG/MAG) and thus a higher gain near the cut-off frequency, which is useful in THz amplifier design.
[1] Samoska S 2006 IEEE MTT-S Int. Microwave Symp. Dig. (San Francisco, USA 11–16 June 2006) p 333 [2] Lai R, Mei X B, Deal W R, Yoshida W, Kim Y M, Liu P H, Lee J, Uyeda J, Radisic V, Lange M, Gaier T, Samoska L and Fung A 2007 IEEE Int. Electron. Devices Meeting (Washington, USA 10–12 December 2007) p 609 [3] Urteaga M, Pierson R, Rowell P, Jain V, Lobisser E and Rodwell M J W 2011 Device Res. Conf. (DRC) 69th Annual (Santa Barbara, USA 20–22 June 2011) p 281 [4] Jin Z, Su Y, Cheng W, Liu X, Xu A and Qi M 2008 Chin. Phys. Lett.25 2686 [5] Zhou L, Jin Z, Su Y, Wang X, Chang H, Xu A and Qi M 2010 J. Semicond.31 9 [6] Cai D, Li X, Zhao Y, Liu T, Gao X and Hao Y 2011 Semiconduct. Technol.36 743 [7] Jin Z, Su Y, Cheng W, Liu X, Xu A and Qi M 2008 Solid-State Electron.52 1825 [8] Tanaka S, Amamiya Y, Murakami S, Shimawaki H, Goto N, Takayama Y and Honjo K 1997 Int. Topical Symp. Millimeter Waves (Kanagawa, Japan 7–8 July 1997) p 27 [9] Cheng W, Jin Z, Yu J and Liu X 2007 Chin. J. Semicond.28 943 [10] Dahlstrom M and Rodwell M 2004 IEEE Int. Conf. Indium Phosphide Relat. Mater. (Santa Barbara, USA May 31–June 4 2004) p 366 [11] Griffith Z 2003 PhD Dissertation (Santa Barbara: UCSB)