1School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071 2Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071 3School of Science, Inner Mongolia University of Technology, Hohhot 010051
Abstract：We investigate the effects of remote nitride-based plasma treatment on the channel carrier and device characteristics of AlGaN/GaN high electron mobility transistors (HEMTs). A 200 W NH$_{3}$/N$_{2}$ remote plasma causes little degeneration of carrier mobility and an increase in electron density due to surface alteration, which results in a decrease in sheet resistance and an increase in output current by 20–30%. Improved current slump, suppressed gate leakage current, and improved Schottky contact properties are also achieved by using low-damage nitride-based plasma treatment. It is found that NH$_{3}$/N$_{2}$ remote plasma treatment is a promising technique for GaN-based HEMTs to modulate the surface conditions and channel properties.
2020, Vol. 37 
