Positive Bias Temperature Instability and Hot Carrier Injection of Back Gate Ultra-thin-body In0.53Ga0.47As-on-Insulator n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor
TANG Xiao-Yu1,2, LU Ji-Wu2, ZHANG Rui2, WU Wang-Ran1, LIU Chang1, SHI Yi1, HUANG Zi-Qian3, KONG Yue-Chan3, ZHAO Yi1,2,4**
1School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 2Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027 3Nanjing Electronic Devices Institute, Nanjing 210016 4State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027
Abstract：Ultra-thin-body (UTB) In0.53Ga0.47As-on-insulator (In0.53Ga0.47As-OI) structures with thicknesses of 8 and 15 nm are realized by transferring epitaxially grown In0.53Ga0.47As layers to silicon substrates with 15-nm-thick Al2O3 as a buried oxide by using the direct wafer bonding method. Back gate n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) are fabricated by using these In0.53Ga0.47As-OI structures with excellent electrical characteristics. Positive bias temperature instability (PBTI) and hot carrier injection (HCI) characterizations are performed for the In0.53Ga0.47As-OI nMOSFETs. It is confirmed that the In0.53Ga0.47As-OI nMOSFETs with a thinner body thickness suffer from more severe degradations under both PBTI and HCI stresses. Moreover, the different evolutions of the threshold voltage and the saturation current of the UTB In0.53Ga0.47As-OI nMOSFETs may be due to the slow border traps.
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2015, Vol. 32 
