Influence of the Diamond Layer on the Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistors

doi:10.1088/0256-307X/34/2/027301

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Abstract：The thermal management is an important issue for AlGaN/GaN high-electron-mobility transistors (HEMTs). In this work, the influence of the diamond layer on the electrical characteristics of AlGaN/GaN HEMTs is investigated by simulation. The results show that the lattice temperature can be effectively decreased by utilizing the diamond layer. With increasing the drain bias, the diamond layer plays a more significant role for lattice temperature reduction. It is also observed that the diamond layer can induce a negative shift of threshold voltage and an increase of transconductance. Furthermore, the influence of the diamond layer thickness on the frequency characteristics is investigated as well. By utilizing the 10-μm-thickness diamond layer in this work, the cutoff frequency $f_{\rm T}$ and maximum oscillation frequency $f_{\max}$ can be increased by 29% and 47%, respectively. These results demonstrate that the diamond layer is an effective technique for lattice temperature reduction and the study can provide valuable information for HEMTs in high-power and high-frequency applications.

收稿日期: 2016-09-27 出版日期: 2017-01-25

:	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	73.50.Lw	(Thermoelectric effects)
	73.61.Ey	(III-V semiconductors)

引用本文:

. [J]. 中国物理快报, 2017, 34(2): 27301-027301.
Xue-Feng Zheng, Ao-Chen Wang, Xiao-Hui Hou, Ying-Zhe Wang, Hao-Yu Wen, Chong Wang, Yang Lu, Wei Mao, Xiao-Hua Ma, Yue Hao. Influence of the Diamond Layer on the Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistors. Chin. Phys. Lett., 2017, 34(2): 27301-027301.

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https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/34/2/027301 或 https://cpl.iphy.ac.cn/CN/Y2017/V34/I2/27301

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