A Method to Obtain Auger Recombination Coefficient in an InGaN-Based Blue Light-Emitting Diode
Lai Wang1** , Xiao Meng1 , Jung-Hoon Song2 , Tae-Soo Kim2 , Seung-Young Lim2 , Zhi-Biao Hao1 , Yi Luo1 , Chang-Zheng Sun1 , Yan-Jun Han1 , Bing Xiong1 , Jian Wang1 , Hong-Tao Li1
1 Tsinghua National Laboratory on Information Science and Technology, and Department of Electronic Engineering, Tsinghua University, Beijing 1000842 Department of Physics, Kongju National University, Kongju 314701, South Korea
Abstract ：We propose and demonstrate to derive the Auger recombination coefficient by fitting efficiency–current and carrier lifetime–current curves simultaneously, which can minimize the uncertainty of fitting results. The obtained Auger recombination coefficient is $1.0\times10^{-31}$ cm$^{6}$s$^{-1}$ in the present sample, which contributes slightly to efficiency droop effect.
收稿日期: 2016-10-08
出版日期: 2016-12-29
:
73.21.Fg
(Quantum wells)
73.40.Kp
(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
78.60.Fi
(Electroluminescence)
引用本文:
. [J]. 中国物理快报, 2017, 34(1): 17301-017301.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/34/1/017301
或
https://cpl.iphy.ac.cn/CN/Y2017/V34/I1/17301
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2017, Vol. 34 
