Electroluminescence from the InGaN/GaN Superlattices Interlayer of Yellow LEDs with Large V-Pits Grown on Si (111)
Xi-xia Tao1 , Chun-lan Mo1,2** , Jun-lin Liu1,2 , Jian-li Zhang1,2 , Xiao-lan Wang1,2 , Xiao-ming Wu1,2 , Long-quan Xu1,2 , Jie Ding1,2 , Guang-xu Wang1,2 , Feng-yi Jiang1
1 National Institute of LED on Silicon Substrate, Nanchang University, Nanchang 3300472 Nanchang Yellow Green Lighting Company Limited, Nanchang 330047
Abstract ：A blue emission originated from InGaN/GaN superlattice (SL) interlayer is observed in the yellow LEDs with V-pits embedded in the quantum wells (QWs), revealing that sufficient holes have penetrated through the QWs into SLs far away from the p-type layer. In the V-pits embedded LEDs, hole transport has two paths: via the flat $c$-plane region or via the sidewalls of V-pits. It is proved that the holes in SLs are injected from the sidewalls of V-pits, and the transportation process is significantly affected by working temperature, current density, and the size of V-pits. Four motion possibilities are discussed when the holes flow via the sidewalls. All these may contribute to a better understanding of hole transport and device design.
收稿日期: 2018-01-29
出版日期: 2018-04-30
引用本文:
. [J]. 中国物理快报, 2018, 35(5): 57303-.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/35/5/057303
或
https://cpl.iphy.ac.cn/CN/Y2018/V35/I5/57303
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2018, Vol. 35 
