Reduction of Electron Leakage in a Deep Ultraviolet Nitride Laser Diode with a Double-Tapered Electron Blocking Layer
Yi-Fu Wang1,2, Mussaab I. Niass1,2, Fang Wang1,2,3**, Yu-Huai Liu1,2,3**
1National Joint Research Center for Electronic Materials and Systems, Zhengzhou University, Zhengzhou 450001 2International Joint Laboratory of Electronic Materials and Systems, Zhengzhou University, Zhengzhou 450001 3School of Information Engineering, Zhengzhou University, Zhengzhou 450001
Abstract：A double-tapered AlGaN electron blocking layer (EBL) is proposed to apply in a deep ultraviolet semiconductor laser diode. Compared with the inverse double-tapered EBL, the laser with the double-tapered EBL shows a higher slope efficiency, which indicates that effective enhancement in the transportation of electrons and holes is achieved. Particularly, comparisons among the double-tapered EBL, the inverse double-tapered EBL, the single-tapered EBL and the inverse single-tapered EBL show that the double-tapered EBL has the best performance in terms of current leakage.
. [J]. 中国物理快报, 2019, 36(5): 57301-.
Yi-Fu Wang, Mussaab I. Niass, Fang Wang, Yu-Huai Liu. Reduction of Electron Leakage in a Deep Ultraviolet Nitride Laser Diode with a Double-Tapered Electron Blocking Layer. Chin. Phys. Lett., 2019, 36(5): 57301-.
2019, Vol. 36 
