2011, Vol. 28(10): 107303-107303    DOI: 10.1088/0256-307X/28/10/107303
	A High Breakdown Voltage AlGaN/GaN MOSHEMT Using Thermal Oxidized Al-Ti as the Gate Insulator
	ZHOU Bin1, WANG Jin-Yan1**, MENG Di1, LIN Shu-Xun2, FANG Min1, DONG Zhi-Hua2, YU Min1, HAO Yi-Long1, Cheng P. WEN1
	1Institute of Microelectronics, Peking University, Beijing 100871 2 Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123
	收稿日期 2011-07-03  修回日期 1900-01-01
	Supporting info
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