摘要Negative bias temperature instability (NBTI) in ultrathin-plasma-nitrided-oxide (PNO) based p-type metal-oxide-semiconductor field effect transistors (pMOSFETs) is investigated at temperatures ranging from 220 K to 470 K. It is found that the threshold voltage VT degradation below 290 K is dominated by the hole trapping process. Further studies unambiguously show that this process is unnecessarily related to nitrogen but the incorporation of nitrogen in the gate dielectric increases the probability of hole trapping in the NBTI process as it introduces extra trap states located in the upper half of the Si band gap. The possible hole trapping mechanism in NBTI stressed PNO pMOSFETs is suggested by taking account of oxygen and nitrogen related trap centers.
Abstract：Negative bias temperature instability (NBTI) in ultrathin-plasma-nitrided-oxide (PNO) based p-type metal-oxide-semiconductor field effect transistors (pMOSFETs) is investigated at temperatures ranging from 220 K to 470 K. It is found that the threshold voltage VT degradation below 290 K is dominated by the hole trapping process. Further studies unambiguously show that this process is unnecessarily related to nitrogen but the incorporation of nitrogen in the gate dielectric increases the probability of hole trapping in the NBTI process as it introduces extra trap states located in the upper half of the Si band gap. The possible hole trapping mechanism in NBTI stressed PNO pMOSFETs is suggested by taking account of oxygen and nitrogen related trap centers.
JI Xiao-Li;LIAO Yi-Ming;YAN Feng**;SHI Yi;ZHANG Guan;GUO Qiang
. Direct Experimental Evidence of Hole Trapping in Negative Bias Temperature Instability[J]. 中国物理快报, 2011, 28(10): 107302-107302.
JI Xiao-Li, LIAO Yi-Ming, YAN Feng**, SHI Yi, ZHANG Guan, GUO Qiang
. Direct Experimental Evidence of Hole Trapping in Negative Bias Temperature Instability. Chin. Phys. Lett., 2011, 28(10): 107302-107302.
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