An Analytical Avalanche Multiplication Model for Partially Depleted Silicon-on-Insulator SiGe Heterojunction Bipolar Transistors
XU Xiao-Bo**, ZHANG He-Ming
Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071
An Analytical Avalanche Multiplication Model for Partially Depleted Silicon-on-Insulator SiGe Heterojunction Bipolar Transistors
XU Xiao-Bo**, ZHANG He-Ming
Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071
摘要An analytical expression for avalanche multiplication of a novel vertical SiGe partially depleted heterojunction bipolar transistor (HBT) on a thin silicon-on-insulator (SOI) layer is obtained, considering vertical and horizontal impact ionization effects. The avalanche multiplication is found to be dependent on the collector width and doping concentration, and shows kinks with the increase of reverse base-collector bias, which is quite different from that of a conventional bulk HBT. The model is consistent with the experimental and simulation data and is found to be significant for the design and simulation of 0.13 µm millimeter wave SiGe SOI BiCMOS technology.
Abstract：An analytical expression for avalanche multiplication of a novel vertical SiGe partially depleted heterojunction bipolar transistor (HBT) on a thin silicon-on-insulator (SOI) layer is obtained, considering vertical and horizontal impact ionization effects. The avalanche multiplication is found to be dependent on the collector width and doping concentration, and shows kinks with the increase of reverse base-collector bias, which is quite different from that of a conventional bulk HBT. The model is consistent with the experimental and simulation data and is found to be significant for the design and simulation of 0.13 µm millimeter wave SiGe SOI BiCMOS technology.
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2011, Vol. 28 
