High-Speed InGaAs/InP Double Heterostructure Bipolar Transistor with High Breakdown Voltage
JIN Zhi1, SU Yong-Bo1, CHENG Wei1, LIU Xin-Yu1, XU An-Huai2, QI Ming2
1Institute of Microelectronics, Chinese Academy of Sciences, Beijing 1000292State Key Lab of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
High-Speed InGaAs/InP Double Heterostructure Bipolar Transistor with High Breakdown Voltage
JIN Zhi1, SU Yong-Bo1, CHENG Wei1, LIU Xin-Yu1, XU An-Huai2, QI Ming2
1Institute of Microelectronics, Chinese Academy of Sciences, Beijing 1000292State Key Lab of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
摘要e design and fabricate an InGaAs/InP double heterostructure bipolar transistor (DHBT). The spike of the conduction band discontinuity between InGaAs base and InP collector is successfully eliminated by insertion of an InGaAs layer and two InGaAsP layers. The current gain cutoff frequency and maximum oscillation frequency are as high as 155 and 144GHz. The breakdown voltage in common-emitter configuration is more than 7V. The high cutoff frequency and high breakdown voltage make high-speed and high-power circuits possible.
Abstract：e design and fabricate an InGaAs/InP double heterostructure bipolar transistor (DHBT). The spike of the conduction band discontinuity between InGaAs base and InP collector is successfully eliminated by insertion of an InGaAs layer and two InGaAsP layers. The current gain cutoff frequency and maximum oscillation frequency are as high as 155 and 144GHz. The breakdown voltage in common-emitter configuration is more than 7V. The high cutoff frequency and high breakdown voltage make high-speed and high-power circuits possible
[1] Hafez W, Snodgrass W and Feng M 2005 Appl. Phys.Lett. 87 252109 [2] Su S, Liu X, Xu A et al 2006 Chin. J. Semiconduct. 27 792 [3] Dahlstrom M 2003 PhD Thesis (University ofCalifornia, Santa Barbara, USA) [4] Jin Z and Liu X 2008 Sci. Chin. E 51 {(accepted) [5] Jin Z, Prost W, Neumann S and Tegude F J 2004 Appl.Phys. Lett. 84 2910 [6] Rodwell M J W, Urteaga M, Mathew T et al 2001 IEEETrans. Electron. Devices 48 2606 [7] Liu W 1998 Handbook of III--V HeterojunctionBipolar Transistors (New York: Wiley-Interscience) p 722 [8] Kirk C T Jr 1962 IRE Trans. Electron. Devices 9 164
2008, Vol. 25 
