摘要Type-Ⅱ GaAsSb/InP DHBTs with selectively-etched InGaAsP ledge structures are fabricated and characterized for the first time. The novel InGaAsP/GaAsSb/InP DHBTs with a 20 nm lattice-matched GaAsSb base and a 75 nm InP collector have a dc current gain improvement by a factor of 2 and a cutoff frequency ƒT of 190 GHz. The InGaAsP ledge design provides a simple but effective approach to suppress the extrinsic base surface recombination and enable GaAsSb/InP DHBTs to further increase the operating frequencies and integration levels for millimeter wave applications.
Abstract：Type-Ⅱ GaAsSb/InP DHBTs with selectively-etched InGaAsP ledge structures are fabricated and characterized for the first time. The novel InGaAsP/GaAsSb/InP DHBTs with a 20 nm lattice-matched GaAsSb base and a 75 nm InP collector have a dc current gain improvement by a factor of 2 and a cutoff frequency ƒT of 190 GHz. The InGaAsP ledge design provides a simple but effective approach to suppress the extrinsic base surface recombination and enable GaAsSb/InP DHBTs to further increase the operating frequencies and integration levels for millimeter wave applications.
(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
引用本文:
LIU Hong-Gang;JIN Zhi;SU Yong-Bo;WANG Xian-Tai;CHANG Hu-Dong;ZHOU Lei;LIU Xin-Yu;WU De-Xin. Extrinsic Base Surface Passivation in High Speed “Type-II'” GaAsSb/InP DHBTs Using an InGaAsP Ledge Structure[J]. 中国物理快报, 2010, 27(5): 58502-058502.
LIU Hong-Gang, JIN Zhi, SU Yong-Bo, WANG Xian-Tai, CHANG Hu-Dong, ZHOU Lei, LIU Xin-Yu, WU De-Xin. Extrinsic Base Surface Passivation in High Speed “Type-II'” GaAsSb/InP DHBTs Using an InGaAsP Ledge Structure. Chin. Phys. Lett., 2010, 27(5): 58502-058502.
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2010, Vol. 27 
