Composite-Collector InGaAs/InP Double Heterostructure Bipolar Transistors with Current-Gain Cutoff Frequency of 242 GHz
CHENG Wei1, JIN Zhi1, SU Yong-Bo1, LIU Xin-Yu1, XU An-Huai2, QI Ming2
1Institute of Microelectronics, Chinese Academy of Sciences, Beijing 1000292Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
Composite-Collector InGaAs/InP Double Heterostructure Bipolar Transistors with Current-Gain Cutoff Frequency of 242 GHz
CHENG Wei1, JIN Zhi1, SU Yong-Bo1, LIU Xin-Yu1, XU An-Huai2, QI Ming2
1Institute of Microelectronics, Chinese Academy of Sciences, Beijing 1000292Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
摘要To eliminate the conduction band spike at the base-collector interface, an InP/InGaAs double heterostructure bipolar transistor (DHBT) with an InGaAsP composite collector is designed and fabricated using the conventional mesa structure. The DHBT with emitter area of 1.6×15μm2 exhibits current-gain cutoff frequency ft = 242GHz at the high collector current density JC=2.1mA/μm2, which is to our knowledge the highest ft reported for the mesa InP DHBT in China. The breakdown voltage in common-emitter configuration is more than 5V. The high-speed InP/InGaAs DHBT with high current density is very suitable for the application in ultra high-speed digital circuits.
Abstract：To eliminate the conduction band spike at the base-collector interface, an InP/InGaAs double heterostructure bipolar transistor (DHBT) with an InGaAsP composite collector is designed and fabricated using the conventional mesa structure. The DHBT with emitter area of 1.6×15μm2 exhibits current-gain cutoff frequency ft = 242GHz at the high collector current density JC=2.1mA/μm2, which is to our knowledge the highest ft reported for the mesa InP DHBT in China. The breakdown voltage in common-emitter configuration is more than 5V. The high-speed InP/InGaAs DHBT with high current density is very suitable for the application in ultra high-speed digital circuits.
[1] Griffith Z, Dahlstrom M, Rodwell M J W, Urteaga M, PiersonR, Rowell P, Brar B, Lee S, Nguyen N and Nguyen C 2004 Bipolar/BiCMOS Circuits and Technology Meeting (Montreal,Canada 13--14 September 2004) p 176 [2] Paidi V, Griffith Z, Wei Y, Dahlstrom M, Parthasarathy N,Urteaga M and Rodwell M J W 2004 IEEE Radio FrequencyIntegrated Circuits Symposium(Texas, USA 6--8 June 2004) p 189 [3] Sugeng B R A, Wei C J and Hwang J C M 1993 IEEE/Cornell Conference on Advanced Concepts in High SpeedSemiconductor Devices {\& Circuits (Cornell University, USA 2--4August 1993) p 52 [4] Dahlstrom M 2003 PhD Thesis (University ofCalifornia, Santa Barbara, USA) [5] Jin Z, Su Y B, Cheng W, Liu X Y, Xu A H and Qi M 2008 Chin. Phys. Lett. 25 2683 [6] Jin Z and Liu X Y 2008 Sci. Chin. E 51(accepted) [7] Griffith Z, Dahlstrom M, Urteaga M, Rodwell M J W, Fang XM, Lubyshev D, Wu Y, Fastenau J M and Liu W K 2004 IEEEElectron. Device Lett. 25 250 [8] Kurishima K, Ida M and Watanabe M 2002 InternationalConference on Solid State Devices and Materials (Nagoya, Japan,17--19 September 2002) p 272 [9] Kim Y M, Dahlstrom M, Lee S, Rodwell M J W and Gossard A C2002 IEEE Electron. Device Lett. 23 297 [10] Jin Z, Prost W, Neumann S and Tegude F J 2004 Appl.Phys. Lett. 84 2910 [11] Yang K, Munns G O, Wang X and Haddad G I 1997 IEEEElectron. Device Lett. 18 553 [12] Cheng W, Jin Z, Liu X Y, Yu J Y, Xu A H and Qi M 2008 Chin. J. Semiconduct. 29 414 [13] Jin Z, Su Y B, Cheng W, Liu X Y, Xu A H and Qi M 2008 Chin. Phys. Lett. 25 2686
2009, Vol. 26 
