High Current Multi-finger InGaAs/InP Double Heterojunction Bipolar Transistor with the Maximum Oscillation Frequency 253GHz
JIN Zhi1, SU Yong-Bo1, CHENG Wei1, LIU Xin-Yu1, XU An-Huai2, QI Ming2
1Institute of Microelectronics, Chinese Academy of Sciences, Beijing 1000292State Key Lab of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
High Current Multi-finger InGaAs/InP Double Heterojunction Bipolar Transistor with the Maximum Oscillation Frequency 253GHz
JIN Zhi1, SU Yong-Bo1, CHENG Wei1, LIU Xin-Yu1, XU An-Huai2, QI Ming2
1Institute of Microelectronics, Chinese Academy of Sciences, Beijing 1000292State Key Lab of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
摘要A four-finger InGaAs/InP double heterojunction bipolar transistor is designed and fabricated successfully by using planarization technology. The emitter area of each finger is 1×15μm2. The breakdown voltage is more than 7V, the maximum collector current could be more than 100mA. The current gain cutoff frequency is as high as 155GHz and the maximum oscillation frequency reaches 253GHz. The heterostructure bipolar transistor can offer more than 70mW class-A maximum output power at W band and the maximum power density can be as high as 1.2W/mm.
Abstract：A four-finger InGaAs/InP double heterojunction bipolar transistor is designed and fabricated successfully by using planarization technology. The emitter area of each finger is 1×15μm2. The breakdown voltage is more than 7V, the maximum collector current could be more than 100mA. The current gain cutoff frequency is as high as 155GHz and the maximum oscillation frequency reaches 253GHz. The heterostructure bipolar transistor can offer more than 70mW class-A maximum output power at W band and the maximum power density can be as high as 1.2W/mm.
(Surface states, band structure, electron density of states)
引用本文:
JIN Zhi;SU Yong-Bo;CHENG Wei;LIU Xin-Yu;XU An-Huai;QI Ming. High Current Multi-finger InGaAs/InP Double Heterojunction Bipolar Transistor with the Maximum Oscillation Frequency 253GHz[J]. 中国物理快报, 2008, 25(8): 3075-3078.
JIN Zhi, SU Yong-Bo, CHENG Wei, LIU Xin-Yu, XU An-Huai, QI Ming. High Current Multi-finger InGaAs/InP Double Heterojunction Bipolar Transistor with the Maximum Oscillation Frequency 253GHz. Chin. Phys. Lett., 2008, 25(8): 3075-3078.
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