Self-Aligned InP/InGaAs Single Heterojunction Bipolar Transistor with Novel Micro-airbridge Structure and Quasi-coplanar Contacts
LI Xian-Jie1,2, CAI Dao-Min1, ZENG Qing-Ming1, LIU Shi-Yong2, LIANG Chun-Guang1
1State Key Laboratory of ASICs, Hebei Semiconductor Research Institute, Shijiazhuang 050051
2Department of Electronic Engineering, Jilin University, Changchun 130023
Self-Aligned InP/InGaAs Single Heterojunction Bipolar Transistor with Novel Micro-airbridge Structure and Quasi-coplanar Contacts
LI Xian-Jie1,2;CAI Dao-Min1;ZENG Qing-Ming1;LIU Shi-Yong2;LIANG Chun-Guang1
1State Key Laboratory of ASICs, Hebei Semiconductor Research Institute, Shijiazhuang 050051
2Department of Electronic Engineering, Jilin University, Changchun 130023
Abstract： The fabrication and performance of a self-aligned InP/InGaAs single heterojunction bipolar transistor (SHBT) with a novel micro-airbridge structure and co-planar-contacts are described. The reported structure is based on anisotropy wet, etching of InP and selective wet, etching between InP and InGaAs. The device with a 1.5 x 5μm2 emitter demonstrats a current gain of 30 at collector current Ic = 10 mA and extrapolates the current-gain cutoff frequency Ft of 53 GHz and the maximum oscillation frequency Fmax of 72 GHz. Compared to the one using the conventional structure, the maximum oscillation frequency of the device with micro-airbridge is dramatically improved from 45 GHz to 72 GHz. This result reveals that the extrinsic capacitance of small size SHBT can be greatly reduced.
2003, Vol. 20 
