2009, Vol. 26(3): 38502-038502    DOI: 10.1088/0256-307X/26/3/038502
Composite-Collector InGaAs/InP Double Heterostructure Bipolar Transistors with Current-Gain Cutoff Frequency of 242 GHz
CHENG Wei1, JIN Zhi1, SU Yong-Bo1, LIU Xin-Yu1, XU An-Huai2, QI Ming2
1Institute of Microelectronics, Chinese Academy of Sciences, Beijing 1000292Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
收稿日期 2008-09-03  修回日期 1900-01-01
Supporting info

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