2009, Vol. 26(3): 38502-038502 DOI: 10.1088/0256-307X/26/3/038502 | ||
Composite-Collector InGaAs/InP Double Heterostructure Bipolar Transistors with Current-Gain Cutoff Frequency of 242 GHz | ||
CHENG Wei1, JIN Zhi1, SU Yong-Bo1, LIU Xin-Yu1, XU An-Huai2, QI Ming2 | ||
1Institute of Microelectronics, Chinese Academy of Sciences, Beijing 1000292Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 | ||
收稿日期 2008-09-03 修回日期 1900-01-01 | ||
Supporting info | ||
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